October 14 - 17, 2012    Salt Lake City CA , USA
The 2012 IEEE Compound Semiconductor IC Symposium (CSICS). This will be the 34th year that the IEEE CSICS (originally GaAs IC Symposium) has been held. Located this year’s Symposium in beautiful La Jolla, California.

This year, coverage includes all aspects of the technology, from materials and device fabrication and modeling to IC design and testing, high volume manufacturing, and system applications. Additionally, the latest results in high-speed digital, analog, microwave, millimeter wave, THz, mixed-signal, and optoelectronic integrated circuits will be presented.

The IEEE CSICS will offer two short courses this year. The first will be “The Future of Compound Semiconductor Devices” covering III-V and Ge channel MOSFETs, GaN HEMTs and Graphene transistors. The second will be “Thermal Management”, covering a critical but rarely discussed topic in IC and device design. In addition, we offer our “Primer Course” on the basics of semiconductor ICs which is an excellent tutorial presented within the context of our Symposium technical program. All three courses will be offered on Sunday Oct. 14th, 2012.

Venue

Location: Hyatt Regency La Jolla
Contact La Jolla , USA